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  dlm10 no.2792-1/3 applications switching regulators, high-frequency rectification. features fast reverse recovery time and small switching loss. reverse voltage : v rm =200 to 400v. a verage rectified current : i o =1.0a. specifications absolute maximum ratings at ta=25 c parameter symbol conditions dlm10c dlm10e unit peak reverse voltage v rm 200 400 v a verage rectified current i o 50hz, resistive load, no fin, ta=57 c resistive load 1.0 a (l=8mm, print land 10 ? 10mm) surge forward current i fsm 50hz sine wave, 1cycle 30 a junction temperature tj 150 c storage temperature tstg --40 to +150 c electrical characteristics [dlm10c] at ta=25 c ratings parameter symbol conditions min typ max unit forward voltage v f i f =1.0a 0.98 v reverse current i r v rm =200v 10 a reverse recovery time t rr i fm =1a, --di/dt=50a/ s35ns thermal resistance (junction-ambient) rth(j-a) no heat sink, dlm10 only 115 c / w sanyo semiconductors d ata sheet ordering number : en2792b 91907rl ti im tc-00000895 / 53098 ha (kt)/92995 gi (koto)/5108 ta, ts specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use.  tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan dlm10 silicon diffused junction type 1.0a ultrahigh-speed rectifier
dlm10 no.2792-2/3 electrical characteristics [dlm10e] at ta=25 c ratings parameter symbol conditions min typ max unit forward voltage v f i f =1.0a 1.25 v reverse current i r v rm =400v 20 a reverse recovery time t rr i fm =1a, --di/dt=50a/ s30ns thermal resistance (junction-ambient) rth(j-a) no heat sink, dlm10 only 115 c / w package dimensions unit : mm (typ) 7811-001 27.0min 5.2max 27.0min 0.8 cathode mark 2.5 i fsm -- n i o -- ta ambient temperature, ta -- c a verage output current, i o -- a number of cycles at 50hz, n surge forward current, i fsm -- a 020406080 100 120 140 150 160 0 0.4 1.2 0.8 1.6 2.0 0 10 20 40 30 it12981 it12980 1.0 10 25 37 2 5 37 100 resistance load since wave 50hz 180 60 120 10mm l=8mm 360 180 360
dlm10 no.2792-3/3 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of september, 2007. specifications and information herein are subject to change without notice. i f -- v f forward voltage, v f -- v forward current, i f -- a i f -- v f forward voltage, v f -- v forward current, i f -- a p f -- i o a verage output current, i o -- a a verage forward power dissipation, p f -- w p f -- i o a verage output current, i o -- a a verage forward power dissipation, p f -- w 0 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 5 7 2 3 5 7 2 3 it12983 tj=150 c 25 c 0 1.0 0.4 1.2 0.8 1.6 2 3 5 7 5 2 3 10 7 0.1 it12982 dlm10c tj=150 c 25 c dlm10e 60 0 0 0.8 1.0 1.4 1.2 0.6 0.2 0.4 0.4 1.6 0.8 1.2 it12984 sine wave 120 180 60 0 0 0.8 1.0 1.4 1.2 0.6 0.2 0.4 0.4 1.6 0.8 1.2 it12985 120 180 dlm10c dlm10e 180 360 180 360 360 360 sine wave


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